Structure and method for FinFET device with asymmetric contact

ABSTRACT

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a fin-type active region extruded from a semiconductor substrate; a gate stack disposed on the fin-type active region; a source/drain feature formed in the fin-type active region and disposed on a side of the gate stack; an elongated contact feature landing on the source/drain feature; and a dielectric material layer disposed on sidewalls of the elongated contact feature and free from ends of the elongated contact feature.

PRIORITY DATA

This application claims the benefit of U.S. Provisional Application62/491,400 entitled “STRUCTURE AND METHOD FOR FINFET DEVICE WITHASYMMETRIC CONTACT,” filed Apr. 28, 2017, herein incorporated byreference in its entirety.

BACKGROUND

Integrated circuits have progressed to advanced technologies withsmaller feature sizes, such as 32 nm, 28 nm and 20 nm. In these advancedtechnologies, the gate pitch (spacing) continuously shrinks andtherefore induces contact to gate bridge concern. Furthermore, threedimensional transistors with fin-type active regions are often desiredfor enhanced device performance. Those three dimensional field effecttransistors (FETs) formed on fin-type active regions are also referredto as FinFETs. FinFETs are required narrow fin width for short channelcontrol, which leads to smaller top S/D regions than those of planarFETs. This will further degrade the contact to S/D landing margin.

Along with the scaling down of the device sizes, such as in deep microtechnology, the contact size was continuously shrunk for high-densitygate pitch requirement. To shrink the contact size without impactingcontact resistance, the long contact shape was proposed for 32 nm andbeyond technologies. Long contact shape allows tight width dimension onthe gate pitch direction but increased length on the gate routingdirection to extend both contact area for source/drain and exposure areain the lithography patterning process. Long contact shape can achieveboth high gate density and lower contact resistance. However, there areconcerns due to the space limitation of line-end side. In line end, theconcerns include line-end shortening and line-end to line-end bridging,leading to either contact-to-fin active connection opening (shortening)or contact-to-contact leakage (bridging). To reduce the line endshortening improve, it requires a wider space rule or more aggressivereshaping by optical proximity correction (OPC) on the line end, whichwill impact the cell size or cause bridging in a given cell pitch. Thisis getting even worse on future fin-type transistors because fin-typeactive regions are very narrow.

Therefore, there is a need for a structure and method for fin-typetransistors and contact structure to address these concerns for enhancedcircuit performance and reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart of a method making a semiconductor structurehaving a multi-fin structure constructed according to various aspects ofthe present disclosure in some embodiments.

FIGS. 2, 3A, 4A, 4C, 5, 6, 7, 9, 10B, 11B, 12, 13B, 14, and 15A aresectional views of a semiconductor structure at various fabricationstages constructed according to some embodiments.

FIGS. 3B, 4B, 10A, 11A, 13A, 13C and 15B are top views of asemiconductor structure at various fabrication stages constructedaccording to some embodiments.

FIGS. 8A and 8B are sectional views of a gate stack of the semiconductorstructure constructed according to some embodiments

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof various embodiments. Specific examples of components and arrangementsare described below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a first feature over or on a second featurein the description that follows may include embodiments in which thefirst and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formedinterposing the first and second features, such that the first andsecond features may not be in direct contact.

FIG. 1 is a flowchart 100 for fabricating a semiconductor structurehaving fin-type transistors and elongated contact features constructedaccording to some embodiments. FIGS. 2 through 15 are top or sectionalviews of a semiconductor structure 200 at various fabrication stages.The semiconductor structure 200 includes fin-type transistors andelongated contact features with asymmetric design in accordance withsome embodiments. The semiconductor structure 200 and the method 100making the same are collectively described below with reference to FIGS.1 through 15.

Referring to FIG. 2, the method 100 begins with block 102 by providing asemiconductor substrate 202. The semiconductor substrate 202 includessilicon. In some other embodiments, the substrate 202 includesgermanium, silicon germanium or other proper semiconductor materials.The substrate 202 may alternatively be made of some other suitableelementary semiconductor, such as diamond or germanium; a suitablecompound semiconductor, such as silicon carbide, indium arsenide, orindium phosphide; or a suitable alloy semiconductor, such as silicongermanium carbide, gallium arsenic phosphide, or gallium indiumphosphide.

The semiconductor substrate 202 also includes various doped regions suchas n-well and p-wells. In one embodiment, the semiconductor substrate202 includes an epitaxy (or epi) semiconductor layer. In anotherembodiment, the semiconductor substrate 202 includes a buried dielectricmaterial layer for isolation formed by a proper technology, such as atechnology referred to as separation by implanted oxygen (SIMOX). Insome embodiments, the substrate 202 may be a semiconductor on insulator,such as silicon on insulator (SOI).

Still referring to FIG. 2, the method 100 proceeds to an operation 104by forming shallow trench isolation (STI) features 204 on thesemiconductor substrate 202. In some embodiments, the STI features 204are formed etching to form trenches, filling the trenches withdielectric material and polishing to remove the excessive dielectricmaterial and planarize the top surface. One or more etching processesare performed on the semiconductor substrate 202 through openings ofsoft mask or hard mask, which are formed by lithography patterning andetching. The formation of the STI features 204 are further describedbelow in accordance with some embodiments.

In the present example, a hard mask is deposited on the substrate 202and is patterned by lithography process. The hard mask layers include adielectric such as semiconductor oxide, semiconductor nitride,semiconductor oxynitride, and/or semiconductor carbide, and in anexemplary embodiment, the hard mask layer include a silicon oxide filmand a silicon nitride film. The hard mask layer may be formed by thermalgrowth, atomic layer deposition (ALD), chemical vapor deposition (CVD),high density plasma CVD (HDP-CVD), other suitable deposition processes.

A photoresist layer (or resist) used to define the fin structure may beformed on the hard mask layer. An exemplary resist layer includes aphotosensitive material that causes the layer to undergo a propertychange when exposed to light, such as ultraviolet (UV) light, deep UV(DUV) light or extreme UV (EUV) light. This property change can be usedto selectively remove exposed or unexposed portions of the resist layerby a developing process referred. This procedure to form a patternedresist layer is also referred to as lithographic patterning.

In one embodiment, the resist layer is patterned to leave the portionsof the photoresist material disposed over the semiconductor structure200 by the lithography process. After patterning the resist, an etchingprocess is performed on the semiconductor structure 200 to open the hardmask layer, thereby transferring the pattern from the resist layer tothe hard mask layer. The remaining resist layer may be removed after thepatterning the hard mask layer. An exemplary lithography processincludes spin-on coating a resist layer, soft baking of the resistlayer, mask aligning, exposing, post-exposure baking, developing theresist layer, rinsing, and drying (e.g., hard baking). Alternatively, alithographic process may be implemented, supplemented, or replaced byother methods such as maskless photolithography, electron-beam writing,and ion-beam writing. The etching process to pattern the hard mask layermay include wet etching, dry etching or a combination thereof. Theetching process may include multiple etching steps. For example, thesilicon oxide film in the hard mask layer may be etched by a dilutedhydrofluorine solution and the silicon nitride film in the hard masklayer may be etched by a phosphoric acid solution.

Then etching process may be followed to etch the portions of thesubstrate 102 not covered by the patterned hard mask layer. Thepatterned hard mask layer is used as an etch mask during the etchingprocesses to pattern the substrate 202. The etching processes mayinclude any suitable etching technique such as dry etching, wet etching,and/or other etching methods (e.g., reactive ion etching (RIE)). In someembodiments, the etching process includes multiple etching steps withdifferent etching chemistries, designed to etching the substrate to formthe trenches with particular trench profile for improved deviceperformance and pattern density. In some examples, the semiconductormaterial of the substrate may be etched by a dry etching process using afluorine-based etchant. Particularly, the etching process applied to thesubstrate is controlled such that the substrate 202 is partially etched.This may be achieved by controlling etching time or by controlling otheretching parameter(s). After the etching processes, the fin structure 206with fin active regions is defined on and extended from the substrate102.

One or more dielectric material is filled in the trenches to form theSTI feature 204. Suitable fill dielectric materials includesemiconductor oxides, semiconductor nitrides, semiconductor oxynitrides,fluorinated silica glass (FSG), low-K dielectric materials, and/orcombinations thereof. In various exemplary embodiments, the dielectricmaterial is deposited using a HDP-CVD process, a sub-atmospheric CVD(SACVD) process, a high-aspect ratio process (HARP), a flowable CVD(FCVD), and/or a spin-on process.

The deposition of the dielectric material may be followed by a chemicalmechanical polishing/planarization (CMP) process to remove the excessivedielectric material and planarize the top surface of the semiconductorstructure. The CMP process may use the hard mask layers as a polishingstop layer to prevent polishing the semiconductor layer 202. In thiscase, the CMP process completely removes the hard mask. The hard maskmay be removed alternatively by an etching process. Although in furtherembodiments, some portion of the hard mask layers remain after the CMPprocess.

Referring to FIGS. 3A and 3B, the method 100 proceeds to an operation106 by forming the fin structure 206 having multiple fin active regions(or fin features). The operation 106 includes recessing the STI features204 such that the fin active regions 206 are extruded above from the STIfeatures 204. The recessing process employs one or more etching steps(such as dry etch, wet etch or a combination thereof) to selectivelyetch back the STI features 204. For example, a wet etching process usinghydrofluoric acid may be used to etch when the STI features 204 aresilicon oxide. FIG. 3B is a top view of the semiconductor structure 200.Exemplary fin active regions 206 are spaced from each in a firstdirection (X direction). The fin active regions 206 have elongated shapeand oriented along a second direction (Y direction), which is orthogonalwith the X direction.

Various doping processes may be applied to the semiconductor regions toform various doped wells, such as n-wells and p-wells at the presentstage or before the operation 106. Various doped wells may be formed inthe semiconductor substrate by respective ion implantations.

Referring to FIGS. 4A, 4B and 4C, the method 100 proceeds to anoperation 108 by forming various gate stacks 208 on the fin activeregions 206. FIG. 4B is a top view; FIG. 4A is a sectional view alongthe dashed line AA′; and FIG. 4C is a sectional view along the dashedline BB′ of the semiconductor structure 200. In the present embodiment,the gate stacks 208 include exemplary gate stacks 208 a, 208 b, 208 cand 208 d, as illustrated in FIG. 4B. The gate stacks 208 have elongatedshapes and are oriented in the first direction (X direction). Each ofthe gate stacks 208 is disposed over multiple fin active regions 206.Particularly, one gate stack 208 (such as gate stack 208 a or 208 d) isdisposed on ends of the fin active regions 206 so that this gate stackis partially landing on the fin active region 206 and partially landingon the STI feature 204 along the Y direction. Those edges are configuredas dummy structures to reduce edge effect and improve overall deviceperformance.

The gate stacks 208 each include a gate dielectric layer and a gateelectrode. The gate dielectric layer includes a dielectric material,such as silicon oxide and the gate electrode includes a conductivematerial, such as polysilicon. The formation of the gate stacks 208includes depositing the gate materials (including polysilicon in thepresent example); and patterning the gate materials by a lithographicprocess and etching. A gate hard mask layer may be formed on the gatematerial layer and is used as an etch mask during the formation of thegate stacks. The gate hard mask layer may include any suitable material,such as a silicon oxide, a silicon nitride, a silicon carbide, a siliconoxynitride, other suitable materials, and/or combinations thereof. Inone embodiment, the gate hard mask includes multiple films, such assilicon oxide and silicon nitride. In some embodiments, the patterningprocess to form the gate stacks includes forming a patterned resistlayer by lithography process; etching the hard mask layer using thepatterned resist layer as an etch mask; and etching the gate materialsto form the gate stacks 208 using the patterned hard mask layer as anetch mask.

One or more gate sidewall features (or gate spacers) 210 are formed onthe sidewalls of the gate stacks 208. The gate spacers 210 may be usedto offset the subsequently formed source/drain features and may be usedfor designing or modifying the source/drain structure profile. The gatespacers 210 may include any suitable dielectric material, such as asemiconductor oxide, a semiconductor nitride, a semiconductor carbide, asemiconductor oxynitride, other suitable dielectric materials, and/orcombinations thereof. The gate spacers 210 may have multiple films, suchas two films (a silicon oxide film and a silicon nitride film) or threefilms ((a silicon oxide film; a silicon nitride film; and a siliconoxide film). The formation of the gate spacers 210 includes depositionand anisotropic etching, such as dry etching.

The gate stacks 208 are configured in the fin active regions for variousfield effect transistors (FETs), therefore also referred to as FinFETs.In some examples, the field effect transistors include n-typetransistors and p-type transistors. In other examples, those fieldeffect transistors are configured to form one or more static randomaccess memory (SRAM) cells. Each SRAM cell includes two cross-coupledinverters configured for data storage. Furthermore, the gate stacks areconfigured to increase the pattern density uniformity and enhance thefabrication quality. For example, as noted above, the gate stacks 208includes edge gate stacks 208 a and 208 b each being extended from thefin active region 206 to the STI feature 204 along the Y direction andlands on both the STI feature and the fin active region.

Referring to FIG. 5, the method 100 proceeds to an operation 110 byforming various source and drain features 212 to respective FinFETs. Thesource and drain features 212 may include both light doped drain (LDD)features and heavily doped source and drain (S/D). For example, eachfield effect transistor includes source and drain features formed on therespective fin active region and interposed by the gate stack 208. Achannel is formed in the fin active region in a portion that isunderlying the gate stack and spans between the source and drainfeatures.

The raised source/drain features may be formed by selective epitaxygrowth for strain effect with enhanced carrier mobility and deviceperformance. The gate stacks 208 and gate spacer 210 constrain thesource/drain features 212 to the source/drain regions. In someembodiments, the source/drain features 212 are formed by one or moreepitaxy or epitaxial (epi) processes, whereby Si features, SiGefeatures, SiC features, and/or other suitable features are grown in acrystalline state on the fin active regions 206. Alternatively, anetching process is applied to recess the source/drain regions before theepitaxy growgth. Suitable epitaxy processes include CVD depositiontechniques (e.g., vapor-phase epitaxy (VPE) and/or ultra-high vacuum CVD(UHV-CVD), molecular beam epitaxy, and/or other suitable processes. Theepitaxy process may use gaseous and/or liquid precursors, which interactwith the composition of the fin structure 206.

The source/drain features 212 may be in-situ doped during the epitaxyprocess by introducing doping species including: p-type dopants, such asboron or BF₂; n-type dopants, such as phosphorus or arsenic; and/orother suitable dopants including combinations thereof. If thesource/drain features 212 are not in-situ doped, an implantation process(i.e., a junction implant process) is performed to introduce thecorresponding dopant into the source/drain features 212. In an exemplaryembodiment, the source/drain features 212 in an nFET include SiC or Sidoped with phosphorous, while those in a pFET include Ge or SiGe dopedwith boron. In some other embodiments, the raised source/drain features212 include more than one semiconductor material layers. For example, asilicon germanium layer is epitatially grown on the substrate within thesource/drain regions and a silicon layer is epitaxially grown on thesilicon germanium layer. One or more annealing processes may beperformed thereafter to activate the source/drain features 110. Suitableannealing processes include rapid thermal annealing (RTA), laserannealing processes, other suitable annealing technique or a combinationthereof.

Referring to FIG. 6, the method proceeds to an operation 112, in whichan inter-level dielectric material (ILD) layer 220 is formed on thesubstrate to cover the source/drain features 212 in the source/drainregions. The ILD 220 surround the gate stacks 208 and the gate spacers210 allowing the gate stacks 208 to be removed and a replacement gate tobe formed in the resulting cavity (also referred to as gate trench).Accordingly, in such embodiments, the gate stacks 208 are removed afterforming the ILD layer 220. The ILD layer 220 may also be part of anelectrical interconnect structure that electrically interconnectsvarious devices of the semiconductor structure 200. In such embodiments,the ILD layer 220 acts as an insulator that supports and isolates theconductive traces. The ILD layer 220 may include any suitable dielectricmaterial, such as a semiconductor oxide, a semiconductor nitride, asemiconductor oxynitride, other suitable dielectric materials, orcombinations thereof. In some embodiments, the formation of the ILDlayer 220 includes deposition and CMP to provide a planarized topsurface.

Referring to FIG. 7, the method proceeds to an operation 114 for gatereplacement. The gate stacks 208 are replaced by gate stacks 230 withhigh k dielectric and metal, therefore also referred to as high-k metalgates. As illustrated in FIG. 7, the fin-type active region spans fromone end 238A to another end 238B along the Y direction. The gatereplacement process may include etching, deposition and polishing. Inthe present example for illustration, exemplary gate stacks 208 a, 208b, 208 c and 208 d are removed, resulting in gate trenches. In someembodiments, the gate stacks 208 are removed by an etching process, suchas a wet etch, to selectively remove the gate stacks 208. The etchingprocess may include multiple etching steps to remove the dummy gate ifmore materials present. Then the gate materials, such as high kdielectric material and metal, are deposited in the gate trenches toform the gate stacks 230, such as exemplary gate stacks 230 a, 230 b,230 c and 230 d. A CMP is further implemented to polish and remove theexcessive gate materials from the semiconductor structure 200. Thestructure and the formation of the gate stacks 230 are further describedbelow with a reference to FIGS. 8A and 8B. FIGS. 8A and 8B illustratesectional views of an exemplary gate stack 230 in accordance withvarious embodiments.

The gate stack 230 (such as 230 b) is formed on the substrate 202overlying the channel region of the fin active region 206. The gatestack 230 includes a gate dielectric feature 232 and a gate electrode234 disposed on the gate dielectric feature 232. In the presentembodiment, the gate dielectric feature 232 includes high-k dielectricmaterial and the gate electrode 234 includes metal or metal alloy. Insome examples, the gate dielectric layer and the gate electrode each mayinclude a number of sub-layers. The high-k dielectric material mayinclude metal oxide, metal nitride, such as LaO, AlO, ZrO, TiO, Ta₂O₅,Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO, HfSiO, LaSiO,AlSiO, HfTaO, HfTiO, (Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄, oxynitrides(SiON), or other suitable dielectric materials. The gate electrode mayinclude Ti, Ag, Al, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, TaN, Ru, Mo,Al, WN, Cu, W, or any suitable materials. In some embodiments, differentmetal materials are used for nFET and pFET devices with respective workfunctions. The gate stack 230 is formed in the gate trench by a properprocedure, such as a procedure that includes deposition and CMP.Although it is understood that the gate stack 230 may be any suitablegate structure.

The gate dielectric feature 232 may further includes an interfaciallayer sandwiched between the high-k dielectric material layer and thefin active region. The interfacial layer may include silicon oxide,silicon nitride, silicon oxynitride, and/or other suitable material. Theinterfacial layer is deposited by a suitable method, such as ALD, CVD,ozone oxidation, etc. The high-k dielectric layer is deposited on theinterfacial layer (if the interfacial layer presents) by a suitabletechnique, such as ALD, CVD, metal-organic CVD (MOCVD), PVD, thermaloxidation, combinations thereof, and/or other suitable techniques. Insome embodiments, the gate dielectric feature 232 is formed on the finactive region 206 at the operation 108 that forms the gate stack 208. Inthis case, the gate dielectric feature 232 is shaped as illustrated inFIG. 8A. In some other embodiments, the gate dielectric feature 232 isformed in the high-k last process, in which the gate dielectric feature232 is deposited in the gate trench at the operation 118. In the case,the gate dielectric feature 232 is U-shaped, as illustrated in FIG. 8B.

The gate electrode 234 may include multiple conductive materials. Insome embodiments, the gate electrode 234 includes a capping layer 234-1,a blocking layer 234-2, a work function metal layer 234-3, anotherblocking layer 234-4 and a filling metal layer 234-5. In furtherance ofthe embodiments, the capping layer 234-1 includes titanium nitride,tantalum nitride, or other suitable material, formed by a properdeposition technique such as ALD. The blocking layer 234-2 includestitanium nitride, tantalum nitride, or other suitable material, formedby a proper deposition technique such as ALD. In some examples, theblock layers may not present or only one of them presents in the gateelectrode.

The work functional metal layer 234-3 includes a conductive layer ofmetal or metal alloy with proper work function such that thecorresponding FET is enhanced for its device performance. The workfunction (WF) metal layer 1606 is different for a pFET and a nFET,respectively referred to as an n-type WF metal and a p-type WF metal.The choice of the WF metal depends on the FET to be formed on the activeregion. For example, the semiconductor structure 200 includes a firstactive region for an nFET and another active region for a pFET, andaccordingly, the n-type WF metal and the p-type WF metal arerespectively formed in the corresponding gate stacks. Particularly, ann-type WF metal is a metal having a first work function such that thethreshold voltage of the associated nFET is reduced. The n-type WF metalis close to the silicon conduction band energy (Ec) or lower workfunction, presenting easier electron escape. For example, the n-type WFmetal has a work function of about 4.2 eV or less. A p-type WF metal isa metal having a second work function such that the threshold voltage ofthe associated pFET is reduced. The p-type WF metal is close to thesilicon valence band energy (Ev) or higher work function, presentingstrong electron bonding energy to the nuclei. For example, the p-typework function metal has a WF of about 5.2 eV or higher. In someembodiments, the n-type WF metal includes tantalum (Ta). In otherembodiments, the n-type WF metal includes titanium aluminum (TiAl),titanium aluminum nitride (TiAlN), or combinations thereof. In otherembodiments, the n-metal include Ta, TiAl, TiAlN, tungsten nitride (WN),or combinations thereof. The n-type WF metal may include variousmetal-based films as a stack for optimized device performance andprocessing compatibility. In some embodiments, the p-type WF metalincludes titanium nitride (TiN) or tantalum nitride (TaN). In otherembodiments, the p-metal include TiN, TaN, tungsten nitride (WN),titanium aluminum (TiAl), or combinations thereof. The p-type WF metalmay include various metal-based films as a stack for optimized deviceperformance and processing compatibility. The work function metal isdeposited by a suitable technique, such as PVD.

The blocking layer 234-4 includes titanium nitride, tantalum nitride, orother suitable material, formed by a proper deposition technique such asALD. In various embodiments, the filling metal layer 234-5 includesaluminum, tungsten or other suitable metal. The filling metal layer234-5 is deposited by a suitable technique, such as PVD or plating.

Referring back to FIG. 7, the method 100 may also include an operationto form a hard mask 236 on top of the gate stacks 230 to protect thegate stacks 230 from loss during subsequent processing. The formation ofthe hard mask 236 includes recessing the gate stacks 230 by selectiveetching; deposition (such as CVD); and CMP according to the presentexample. The hard mask may include a suitable material different fromthe dielectric material of the ILD layers to achieve etching selectivityduring the etching process to form contact openings. In someembodiments, the hard mask 236 includes silicon nitride. For examples,the hard mask 236 of silicon nitride (SiN) is formed by CVD usingchemicals including Hexachlorodisilane (HCD or Si2Cl6), Dichlorosilane(DCS or SiH2Cl2), Bis(TertiaryButylAmino) Silane (BTBAS or C8H22N2Si)and Disilane (DS or Si2H6).

Referring to FIG. 9, the method 100 proceeds to an operation 116 byforming another ILD layer 240 similar to the ILD layer 220 in terms ofcomposition and formation. For example, the formation of the ILD layer240 may include deposition and CMP.

Referring to FIGS. 10A and 10B, the method 100 proceeds to an operation118 by patterning the ILD layer 240 to form continuous openings 242 bylithography patterning and etching. A hard mask may be used to patternthe ILD layer 240. The etching process etches through the ILD layers 240and 220 until the source/drain features 212 are exposed. FIG. 10A is atop view, in portion (only show the ILD layer 240 and the contactopenings 242). FIG. 10B is a sectional view along the dashed line AA′.

Referring to FIGS. 11A and 11B, the method 100 proceeds to an operation120 by forming a high-k dielectric material layer 246 on sidewalls ofthe continuous contact openings 242 by deposition such that the high-kdielectric material layer is formed on the sidewalls. In someembodiments, the high k-dielectric material is different from that ofthe gate stacks 230. For examples, the high k-dielectric material layer246 includes silicon nitride or other nitride-based dielectric material.In other examples, the high k-dielectric material layer 246 includesmetal oxide dielectric material, such as Hf oxide, Ta oxide, Ti oxide,Zr oxide, Al oxide or a combination thereof. The high k-dielectricmaterial layer 246 has a thickness ranging between 5 and 30 angstroms insome examples. FIG. 11A is a top view, in portion (only show the ILDlayer 240; the high k-dielectric material layer 246; and the openings242). FIG. 11B is a sectional view along the dashed line AA′.

Referring to FIG. 12, the method 100 proceeds to an operation 122 bydepositing a dielectric material layer 248 to fill in the continuouscontact openings 242. Instead of filling a conductive material to thecontact openings 242 to form contact features, the dielectric materiallayer 248 is filled in the contact openings. The dielectric materiallayer 248 may have a composition different from those dielectricmaterials of the ILD layers. For example, the dielectric material layer248 includes silicon oxide formed by flowable CVD (FCVD).

Referring to FIGS. 13A and 13B, the method 100 proceeds to an operation124 by patterning the dielectric material layer 248 to define contactopenings 250, which will be filled to form contact features. The contactopenings 250 are different from the openings 242. The openings 242 aredefined by the patterned ILD layer 240 while the contact openings 250are collectively defined by the patterned ILD layer 240, the patterneddielectric material layer 248 and the high-k dielectric material layer246. FIG. 13A is a top view, in portion (only show the ILD layer 240;the high k-dielectric material layer 246; the dielectric material layer248 and the contact openings 250). FIG. 13B is a sectional view alongthe dashed line AA′. In the operation 124, the dielectric material layer248 is patterned by lithography process and etching. In some example, apatterned mask is formed on the dielectric material layer 248 bylithography process and etching, in which the etching processselectively removes the dielectric material layer 248 so that thesource/drain features 212 are exposed.

FIG. 13C is a top view of the semiconductor structure 200 constructedaccording to other embodiments. FIG. 13C is similar to FIG. 13A but itzooms out to include large area of the semiconductor structure 200 sofor better illustrating both the original openings 242 and the contactopenings 250. The openings 242 is defined in the ILD layer 240 and spansto continuous long openings while the contact openings 250 are definedcollectively by the high-k dielectric material layer 246 and thedielectric material layer 248. Especially, the high-k dielectricmaterial layer 246 only on sidewalls of the openings 250 along the Xdirection but not on the end sidewalls along the Y direction.Furthermore, thus formed contact openings 250 have elongated shapeextending through one or more FinFETs, as illustrated in FIG. 13C. Asthe high-k dielectric material layer 246 is absent from the ends of thecontact openings 250, the contact features to be formed in the openings250 will have more contact areas for reduced contact resistance andenlarged margin for improved process windows. Therefore, it enlarges thelanding margin between slot contacts to FinFET source/drain regions.

Referring to FIG. 14, the method 100 proceeds to an operation 126 byetching back the high-k dielectric material layer 246 such that thesource/drain features 212 are exposed within the openings. During theetching-back process, the top surface of the high-k dielectric materiallayer 246 is also recessed as well.

Referring to FIGS. 15A and 15B, the method 100 proceeds to an operation128 by forming contact features 260 in the contact openings 250. Theformation of the contact features 260 includes deposition of conductivematerial and CMP according to some examples. The deposition may beimplemented through proper technique, such as physical vapor deposition(PVD), plating, CVD or other suitable method. The openings 250 arefilled with one or more conductive material, such as Ti, TiN, TaN, Co,W, Al, Cu, or combination. As noted above, thus formed contact features260 has elongated shape with length to width ratio greater than 2 forreduced contact resistance and improved process window. Especially, theelongated contact feature 260 is asymmetric along its width directionand its length direction. As illustrated in FIG. 15B, the elongatedcontact feature 260 includes two long edges 262 laterally contacting thehigh-k dielectric material layer 246 and two short edges (also referredto as ends) 264 laterally contacting the dielectric material layer 248.In other words, the sidewalls of the two ends 264 are free of the high-kdielectric material layer 246.

In some embodiments, prior to the filling in the conductive material inthe openings 250, silicide may be formed on the source/drain features212 to further reduce the contact resistance. The silicide includessilicon and metal, such as titanium silicide, tantalum silicide, nickelsilicide or cobalt silicide. The silicide may be formed by a processreferred to as self-aligned silicide (or salicide). The process includesmetal deposition, annealing to react the metal with silicon, and etchingto remove unreacted metal.

Other fabrication steps may be implemented before, during and after theoperations of the method. For example, various metal lines and vias inthe interconnect structure are further formed on the semiconductorstructure to electrically connect various FinFETs and other devices intoa functional circuit by proper technique, such as dual damasceneprocess. In various patterning processes above in the method 100, eachpatterning procedure may be implemented through double patterning ormultiple patterning.

The present disclosure provides a contact structure and a method makingthe same in accordance with various embodiments. Thus formed contactfeatures have elongated shape and asymmetric structure along its lengthdirection and width direction. The high-k dielectric material layer isdisposed on length sidewalls of the contact features but absent from twoends. The elongated contact features will have more contact areas forreduced contact resistance and enlarged margin for improved processwindows. Therefore, it enlarges the landing margin between slot contactsto FinFET source/drain regions. This allows the designer to push theline-end space rule and therefore increases the line end landing areasof contacts to fin active regions. The disclosed structure can be usedin various applications where FinFETs are incorporated for enhancedperformance. For example, the FinFETs with multi-fin devices can be usedto form static random access memory (SRAM) cells. In other examples, thedisclosed structure can be incorporated in various integrated circuits,such as logic circuit, dynamic random access memory (DRAM), flashmemory, or imaging sensor.

Thus, the present disclosure provides a semiconductor structure inaccordance with some embodiments. The semiconductor structure includes afin-type active region extruded from a semiconductor substrate; a gatestack disposed on the fin-type active region; a source/drain featureformed in the fin-type active region and disposed on a side of the gatestack; an elongated contact feature landing on the source/drain feature;and a dielectric material layer disposed on sidewalls of the elongatedcontact feature and free from ends of the elongated contact feature. Thesidewalls of the elongated contact feature are parallel with the gatestack

The present disclosure provides a semiconductor structure in accordancewith some other embodiments. The semiconductor structure includes afirst fin-type active region extruded from a semiconductor substrate andspanning from a first end to a second end along a first direction; asecond fin-type active region extruded from the semiconductor substrateand spanning from a third end to a fourth end along the first direction;a first gate stack and a second gate stack each disposed on the firstand second fin-type active regions, wherein the first and second gatestacks space away in the first direction and extend along a seconddirection that is orthogonal to the first direction; a firstsource/drain feature formed in the first fin-type active region andinterposed between the first and second gate stacks; a secondsource/drain feature formed in the second fin-type active region andinterposed between the first and second gate stacks; an elongatedcontact feature extending along the second direction and landing on thefirst and second source/drain features; and a dielectric material layerdisposed on sidewalls of the elongated contact feature and is free fromtwo ends of the elongated contact feature. The sidewalls of theelongated contact feature extend along the second direction.

The present disclosure provides a method forming an integrated circuitstructure in accordance with some embodiments. The method includesforming a shallow trench isolation (STI) structure in a semiconductorsubstrate of a first semiconductor material, thereby defining aplurality of fin-type active regions separated from each other by theSTI structure; forming gate stacks on the fin-type active regions;forming an inter-layer dielectric (ILD) layer filling in gaps betweenthe gate stacks; patterning the ILD layer to form a trench betweenadjacent two of the gate stacks; depositing a first dielectric materiallayer that is conformal in the trench; filling the trench with a seconddielectric material layer; patterning the second dielectric materiallayer to form a contact opening; and filling a conductive material inthe contact opening to form a contact feature.

The foregoing has outlined features of several embodiments. Thoseskilled in the art should appreciate that they may readily use thepresent disclosure as a basis for designing or modifying other processesand structures for carrying out the same purposes and/or achieving thesame advantages of the embodiments introduced herein. Those skilled inthe art should also realize that such equivalent constructions do notdepart from the spirit and scope of the present disclosure, and thatthey may make various changes, substitutions and alterations hereinwithout departing from the spirit and scope of the present disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: a fin-typeactive region extruded from a semiconductor substrate; a gate stackdisposed on the fin-type active region; a source/drain feature formed inthe fin-type active region and disposed on a side of the gate stack; anelongated contact feature landing on the source/drain feature; and adielectric material layer disposed on sidewalls of the elongated contactfeature and free from ends of the elongated contact feature, wherein thesidewalls of the elongated contact feature are parallel with the gatestack.
 2. The semiconductor structure of claim 1, wherein the gate stackincludes a gate dielectric feature, a gate electrode on the gatedielectric feature, and a spacer on sidewalls of the gate electrode; andthe dielectric material layer is interposed between the gate stack andthe elongated contact feature and directly contacts the spacer and theelongated contact feature.
 3. The semiconductor structure of claim 2,wherein the gate dielectric feature includes a first high k dielectricmaterial and the dielectric material layer includes a second high kdielectric material different from the first high k dielectric materialin composition.
 4. The semiconductor structure of claim 3, wherein thedielectric material layer is recessed from the elongated contact featuresuch that a top surface of the dielectric material layer is below a topsurface of the elongated contact feature.
 5. The semiconductor structureof claim 1, further comprising a shallow trench isolation (STI) featureformed on the semiconductor substrate and surrounding the fin-typeactive region.
 6. The semiconductor structure of claim 5, furthercomprising a second gate stack disposed partially on an end of thefin-type active region and partially on the STI feature.
 7. Thesemiconductor structure of claim 1, wherein the elongate contact featurehas an L/W ratio defined as its length over its width, wherein the L/Wratio is greater than
 2. 8. A semiconductor structure, comprising: afirst fin-type active region extruded from a semiconductor substrate andspanning from a first end to a second end along a first direction; asecond fin-type active region extruded from the semiconductor substrateand spanning from a third end to a fourth end along the first direction;a first gate stack and a second gate stack each disposed on the firstand second fin-type active regions, wherein the first and second gatestacks space away in the first direction and extend along a seconddirection that is orthogonal to the first direction; a firstsource/drain feature formed in the first fin-type active region andinterposed between the first and second gate stacks; a secondsource/drain feature formed in the second fin-type active region andinterposed between the first and second gate stacks; an elongatedcontact feature extending along the second direction and landing on thefirst and second source/drain features; and a dielectric material layerdisposed on sidewalls of the elongated contact feature and is free fromtwo ends of the elongated contact feature, the sidewalls of theelongated contact feature extending along the second direction.
 9. Thesemiconductor structure of claim 8, wherein the first and second gatestacks each include a gate dielectric feature, a gate electrode on thegate dielectric feature, and a spacer on sidewalls of the gateelectrode; and the dielectric material layer directly contacts thespacer of the first gate stack and the spacer of the second gate stack.10. The semiconductor structure of claim 9, wherein the gate dielectricfeature includes a first high k dielectric material and the dielectricmaterial layer includes a second high k dielectric material differentfrom the first high k dielectric material in composition.
 11. Thesemiconductor structure of claim 10, wherein the second high kdielectric material includes silicon nitride; and the first and secondsource/drain features each include an epitaxially grown semiconductorfeature of a semiconductor material different from that of thesemiconductor substrate.
 12. The semiconductor structure of claim 8,wherein the dielectric material layer is recessed from the elongatedcontact feature.
 13. The semiconductor structure of claim 8, furthercomprising a shallow trench isolation (STI) feature formed on thesemiconductor substrate and surrounding the first and second fin-typeactive regions; a third gate stack disposed partially on the first endof the first fin-type active region and the third end of the secondfin-type active region and partially on the STI feature; and a fourthgate stack disposed partially on the second end of the first fin-typeactive region and the fourth end of the second fin-type active regionand partially on the STI feature.
 14. The semiconductor structure ofclaim 8, wherein the elongated contact feature has an L/W ratio definedas its length over its width, wherein the L/W ratio is greater than 2.15. A semiconductor structure, comprising: a fin-type active regionextruded from a semiconductor substrate; a gate stack disposed on thefin-type active region; a source/drain feature formed in the fin-typeactive region and disposed on a side of the gate stack; an elongatedcontact feature contacting on the source/drain feature and having longedges oriented along the gate stack and short edges oriented along thefin-type active region; and a dielectric material layer disposed onsidewalls of the long edges of the elongated contact feature and freefrom sidewalls of the short edges of the elongated contact feature. 16.The semiconductor structure of claim 15, further comprising a gatespacer disposed on sidewalls of the gate stack, wherein the dielectricmaterial layer laterally contacts the spacer of the gate stack.
 17. Thesemiconductor structure of claim 15, wherein the gate stack includes agate dielectric feature, and a gate electrode on the gate dielectricfeature; the gate dielectric feature includes a first high k dielectricmaterial; and the dielectric material layer includes a second high kdielectric material different from the first high k dielectric materialin composition.
 18. The semiconductor structure of claim 17, wherein thesidewalls of the short edges of the elongated contact feature laterallycontacts a dielectric material different from the second high kdielectric material in composition.
 19. The semiconductor structure ofclaim 15, wherein the dielectric material layer is recessed from theelongated contact feature such that a top surface of the dielectricmaterial layer is below a top surface of the elongated contact feature.20. The semiconductor structure of claim 15, further comprising: ashallow trench isolation (STI) feature formed on the semiconductorsubstrate and surrounding the fin-type active region; and a second gatestack disposed partially on an end of the fin-type active region andpartially on the STI feature.